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| FJV1845 FJV1845 Amplifier Transistor * Complement to FJV992 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Junction Temperature Storage Temperature Value 120 120 5 50 10 300 150 -55 ~ 150 Units V V V mA mA mW C C Electrical Characteristics Ta=25C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 VBE (on) VCE (sat) fT Cob Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter On Voltage Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB=120V, IE=0 VEB=5V, IC=0 VCE=6V, IC=0.1mA VCE=6V, IC=1mA VCE=6V, IC=1mA IC=10mA, IB=1mA VCE=6V, IC=1mA VCB=30V, IE=0, f=1MHz 50 150 200 0.55 580 600 0.59 0.07 110 1.6 2.5 Min. Typ. Max. 50 50 1200 0.65 0.3 V V MHz pF Units nA nA hFE2 Classification Classification hFE2 P 200 ~ 400 Marking F 300 ~ 600 E 400 ~ 800 U 600 ~ 1200 6E hFE Classification (c)2002 Fairchild Semiconductor Corporation Rev. B1, August 2002 FJV1845 Typical Characteristics 10 IB=16A IB=14A 1.0 IB=1.4A IB=1.2A IB=1.0A IB=0.8A IB=0.6A IC[mA], COLLECTOR CURRENT 8 IB=12A IB=10A IB=8A 4 6 IC[mA], COLLECTOR CURRENT 0.8 0.6 IB=6A IB=4A 0.4 IB=0.4A 2 0.2 IB=0.2A IB=2A 0 0 1 2 3 4 5 0.0 0 20 40 60 80 100 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. Static Characteristic 1000 900 800 VCE = 6V Pule Test VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 IC=10IB Pulse Test 10 hFE, DC CURRENT GAIN 700 600 500 400 300 200 100 0 0.01 1 VBE(sat) 0.1 VCE(sat) 0.1 1 10 100 0.01 0.1 1 10 100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 10k IE=0 fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT f=1MHz VCE=6V Cob[pF], CAPACITANCE 1k 1 100 0.1 1 10 100 10 0.1 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE IE[mA], EMITTER CURRENT Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product (c)2002 Fairchild Semiconductor Corporation Rev. B1, August 2002 FJV1845 Typical Characteristics (Continued) 100 500 IC[mA], COLLECTOR CURRENT 10 PC[mW], POWER DISSIPATION 0.9 VCE = 6V Pulse Test 400 300 1 200 0.1 100 0.01 0.4 0.5 0.6 0.7 0.8 0 0 25 50 o 75 100 125 150 175 VBE[V], BASE-EMITTER VOLTAGE Ta[ C], CASE TEMPERATURE Figure 7. Collector Current vs. Base-Emitter Voltage Figure 8. Power Derating (c)2002 Fairchild Semiconductor Corporation Rev. B1, August 2002 FJV1845 Package Dimensions SOT-23 0.20 MIN 2.40 0.10 0.40 0.03 1.30 0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 0.03 0.96~1.14 2.90 0.10 0.12 -0.023 +0.05 0.95 0.03 0.95 0.03 1.90 0.03 0.508REF 0.97REF Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. B1, August 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2002 Fairchild Semiconductor Corporation Rev. I1 |
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